Method of forming an integrated circuit having a device wafer with a diffused doped backside layer
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United States of America Patent
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Oct 20, 2009
Issued Date -
N/A
app pub date -
Oct 11, 2007
filing date -
Jun 30, 1999
priority date (Note) -
Expired
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Abstract
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit is provided. The method comprises forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit. Implanting the bond oxide with a diffusing dopant. Diffusing dopant from the bond oxide into the backside surface of the device wafer. Depositing an oxide layer on the bond oxide and bonding the deposited oxide layer to the handle wafer of the integrated circuit.
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