Method and apparatus for damage-free, single wafer, sonic boundary layer, megasonic cleaning
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United States of America Patent
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Issued Date -
Feb 7, 2008
app pub date -
Jul 31, 2007
filing date -
Aug 2, 2006
priority date (Note) -
Abandoned
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Abstract
A method and apparatus for megasonic cleaning of semiconductor wafers. The wafer is positioned so that the surface to be cleansed is parallel to and faces the radiating surface of a quartz or similar resonator which receives sonic waves through a liquid medium from a transducer. The sonic waves striking the wafer are preferably at about a 5.degree. to 30.degree. offset angle from a normally directed wave to the plane of the wafer. The layered medium is gasified and serves to couple the transducer to the resonator. A layer of degasified cleaning fluid is positioned between the resonator and the wafer.
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