MEMORY CELL SYSTEM WITH NITRIDE CHARGE ISOLATION
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United States of America Patent
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Issued Date -
Feb 7, 2008
app pub date -
Aug 2, 2006
filing date -
Aug 2, 2006
priority date (Note) -
Abandoned
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Abstract
A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a first intermediate layer over the first insulator layer, forming a charge trap layer over the first intermediate layer, forming a second intermediate layer over the charge trap layer, and forming a second insulator layer with the second intermediate layer.
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