POLISHING COMPOSITION FOR SEMICONDUCTOR WAFER, PRODUCTION METHOD THEREOF, AND POLISHING METHOD
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United States of America Patent
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Issued Date -
Feb 14, 2008
app pub date -
Aug 13, 2007
filing date -
Aug 14, 2006
priority date (Note) -
Abandoned
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Abstract
A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25.degree. C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.
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