Nitride semiconductor light emitting diode
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United States of America Patent
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Issued Date -
Feb 21, 2008
app pub date -
May 3, 2007
filing date -
Aug 21, 2006
priority date (Note) -
Abandoned
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Abstract
A nitride semiconductor light emitting diode includes: an n-type clad layer; an active layer formed on the n-type clad layer; an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and a p-type clad layer formed on the electron blocking layer.
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