Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
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United States of America Patent
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Issued Date -
Feb 28, 2008
app pub date -
Aug 24, 2006
filing date -
Aug 24, 2006
priority date (Note) -
Abandoned
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Abstract
An intermediate film is provided between the front contact and an absorbing semiconductor film of a photovoltaic device. The intermediate film may be discrete or refractive index graded in certain example embodiments of this invention. The refractive index (n) of the intermediate film is tuned to satisfy one or more of: (a) reduce optical reflection of solar radiation from the TCO/absorber interface thereby enhancing the amount of radiation which penetrates the absorber and which can be converted into electrical energy, (b) increase the amount of radiation trapped within the absorber, (c) reduce cross-diffusion of elements between the TCO of the front contact and the absorbing semiconductor film, and/or (d) form a high resistivity buffer layer (HRBL) between the front contact TCO and the absorber film.
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