Silicon photovoltaic cell junction formed from thin film doping source
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United States of America Patent
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Issued Date -
Mar 6, 2008
app pub date -
Jan 31, 2006
filing date -
Jan 31, 2006
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Abandoned
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Abstract
A method and apparatus for fabricating a solar cell and forming a p-n junction is disclosed. Solar cell p-n junction is formed by depositing a thin film of n-type phosphorus doped silicon material on a sheet from a mixture of precursors and annealing the sheet to obtain the p-n junction at a desired depth. In one embodiment, a plasma enhanced chemical vapor deposition chambers is used to deposit a phosphorus doped amorphous silicon film on a sheet surface by using precursors including a silicon-containing gas, a hydrogen-containing precursor, and a phosphorus-containing gas. In another embodiment, annealing furnace and/or rapid thermal processing chambers are used to anneal the sheet having the phosphorus doped amorphous silicon film deposited thereon.
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