SEMICONDUCTOR DEVICE INCLUDING A GATE ELECTRODE HAVING A POLYMETAL STRUCTURE

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United States of America Patent

APP PUB NO 20080061386A1
SERIAL NO

11853851

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Abstract

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A semiconductor device includes a gate electrode including a polysilicon layer, a tungsten silicide layer, a tungsten nitride layer, and a tungsten layer, which are arranged in this order as viewed from a silicon substrate. The polysilicon layer is doped with phosphor, and the tungsten silicide layer is doped with nitrogen. The polysilicon layer is additionally doped with nitrogen in the top portion thereof.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ELPIDA MEMORY, INC.TOKYO212

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Taguwa, Tetsuya Tokyo, JP 25 170

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