Chalcogenide semiconductor memory device with insulating dielectric

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20080064198A1
SERIAL NO

11518818

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor chalcogenide containing memory device may be formed with a dielectric in close juxtaposition to a chalcogenide alloy. Because the dielectric includes material interface regions, the thermal conductivity of the dielectric is reduced. As one result, heat transfer may be reduced, reducing the programming current required to program the chalcogenide alloy.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
OVONYX INC2956 WATERVIEW DRIVE ROCHESTER HILLS MI 48309

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Czubatyj, Wolodymyr Warren, MI 67 5770
Kostylev, Sergey Bloomfield Hills, MI 22 1655
Lowrey, Tyler West Augusta, VA 149 5841

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation