Electron Beam Etching Apparatus and Method for the same
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United States of America Patent
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N/A
Issued Date -
Mar 20, 2008
app pub date -
Aug 16, 2006
filing date -
Aug 16, 2006
priority date (Note) -
Abandoned
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Abstract
A electron beam etching apparatus uses carbon nanotube as electron emitter. The electron beam etching apparatus includes a vacuum chamber, a cathode plate, an anode plate and a driver unit. The cathode plate and the anode plate are arranged in the vacuum chamber and parallel to each other. The cathode plate includes a plurality of cathode units, where each of the cathode units uses a carbon nanotube as an electron emitter. A gate conductive layer is provided atop the cathode unit. The anode plate includes a substrate and an etching target. The driver unit is electrically connected to the cathode unit and gate conductive layer. The driver unit controls the cathode unit through the gate conductive layer to generate electron beam for etching. The accuracy of etching process can be improved and the cathode unit has the advantage of replacement possibility.
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