Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell

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United States of America Patent

PATENT NO 7468908
APP PUB NO 20080068893A1
SERIAL NO

11929152

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Abstract

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A non-volatile semiconductor memory device includes a non-volatile memory cell and a write circuit that is adapted to write data to the memory cell by supplying a write voltage and a write control voltage to the memory cell to change the write state of the memory cell, changing the supply of the write control voltage to reduce the rate of changing the write state, further changing the supply of the write control voltage to control the reduced rate of changing the write state and terminating the write operation to the memory cell while the rate of changing the write state is reduced.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tanaka, Tomoharu Yokohama, JP 333 14433

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