Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20080089831A1
SERIAL NO

11984950

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Abstract

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The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NIPPON MINING & METALS CO., LTD.TOKYO5

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Atsutoshi Kitaibaraki-shi, JP 26 199
Asahi, Toshiaki Saitama-shi, JP 15 52
Sato, Kenji Takasaki-shi, JP 420 3119
Yamamoto, Tetsuya Kochi-shi, JP 351 5834

Cited Art Landscape

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THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (1)
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SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
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FLIR DETECTION, INC. (2)
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RICOH COMPANY, LTD. (2)
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JX NIPPON MINING & METALS CORPORATION (1)
* 2004/0155,255 Method for manufacturing znte compound semiconductor single crystal znte compound semiconductor single crystal, and semiconductor device 4 2004
 
QIMONDA AG (1)
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GUARDIAN GLASS, LLC. (1)
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EASTMAN KODAK COMPANY (1)
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International Solar Electric Technology, Inc. (1)
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SUPERIMAGING, INC. (1)
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* Cited By Examiner

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8502156 Detector material for a detector for use in CT systems, detector element and detector 2 2009
 
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (2)
* 8288255 N-type doping of zinc telluride 0 2012
* 2012/0202,341 N-TYPE DOPING OF ZINC TELLURIDE 0 2012
 
JX NIPPON MINING & METALS CORPORATION (5)
* 7629625 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 0 2007
* 7521282 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 0 2007
* 7517720 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 0 2007
* 2008/0090,327 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 6 2007
* 2008/0090,390 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 4 2007
* Cited By Examiner