METHOD FOR MANUFACTURING A MEMORY DEVICE
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United States of America Patent
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Issued Date -
Apr 24, 2008
app pub date -
Oct 20, 2006
filing date -
Oct 20, 2006
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing a memory device that includes using a gap-filling material that inhibits charge coupling between memory devices. A semiconductor material is provided that has an active region and an isolation region. A charge trapping structure is formed over the active region and a layer of semiconductor material is formed over the charge trapping structure and the isolation region. A masking structure having sidewalls is formed on the layer of semiconductor material. Spacers are formed adjacent the sidewalls and the layer of semiconductor material is etched to form one or more conductive strips having opposing sides. The one or more conductive strips are formed over the active region. A dielectric material is formed adjacent to the opposing sides of each conductive strip. The dielectric material serves as a gap-filling material. A layer of semiconductor material is formed over the one or more conductive strips.
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