SLURRY COMPOSITION FOR FORMING TUNGSTEN PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Apr 24, 2008
app pub date -
Sep 27, 2007
filing date -
Sep 27, 2006
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Abandoned
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Abstract
A method for manufacturing a semiconductor device with a slurry composition for forming a tungsten pattern. The method comprises: forming a trench in an insulating film formed on a substrate; depositing a tungsten film over the insulating film including the trench; first polishing a tungsten film with a first slurry for polishing metal to expose the insulating film, the polishing selectivity ratio of the first slurry onto tungsten/insulating film being range from 30 to 100; and second polishing the insulating film and the tungsten film with a second slurry, the polishing selectivity ratio of the second slurry onto insulating film/tungsten being range from 3 to 500. The method reduces a thickness difference of tungsten patterns, thereby improving a production yield of semiconductor devices.
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