Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric Shape
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United States of America Patent
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Issued Date -
May 1, 2008
app pub date -
Oct 26, 2007
filing date -
May 4, 2005
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench of a predetermined geometric shape is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.
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