SOI-based inverse nanotaper optical detector
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United States of America Patent
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Issued Date -
May 8, 2008
app pub date -
Jun 12, 2007
filing date -
Jun 15, 2006
priority date (Note) -
Abandoned
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Abstract
A photodetector integrated within a silicon-on-insulator (SOI) structure is formed directly upon an inverse nanotaper endface coupling region to reduce polarization sensitivity at the detector's input. The photodetector may be germanium-based PN (PIN) junction photodetector, a SiGe photodetector, a metal/silicon Schottky barrier photodetector, or any other suitable silicon-based photodetector. The inverse nanotaper photodetector may also be formed as an in-line monitoring device, converting only a portion of the in-coupled optical signal and allowing for the remainder to thereafter propagate along an associated optical waveguide.
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