Forming buried contact etch stop layer (CESL) in semiconductor devices self-aligned to diffusion
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 15, 2008
app pub date -
Nov 1, 2007
filing date -
Nov 2, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A buried contact etch stop layer (CESL) is disposed between adjacent diffusions in a semiconductor device, such as between bitlines in a memory array. The CESL may be self-aligned to the diffusions, and may prevent misaligned bitline (BL) contacts from contacting silicon outside of the corresponding bitlines. The bitline contacts may have sufficient overlap of the bitlines to ensure full coverage by the bitlines. STI trenches may optionally be formed under the CESL. The CESL may comprise nitride or any other material that is harder (more resistant) to etch than the material on top of it.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully