Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
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United States of America Patent
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Issued Date -
May 22, 2008
app pub date -
Nov 22, 2006
filing date -
Nov 22, 2006
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Abandoned
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Abstract
The present invention provides a method of removing silicon nitride in preference to silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and an additive that suppresses the silicon dioxide removal rate but enhances the silicon nitride removal rate. In one embodiment of the invention, the additive is lysine, which is effective at a pH of about 9, or arginine, which is effective at a pH of about 8. In another embodiment of the invention, the additive is lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8, or arginine in combination with picolinic acid, which is effective at a pH of about 9.
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