CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER
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United States of America Patent
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Issued Date -
May 22, 2008
app pub date -
Oct 3, 2007
filing date -
Oct 12, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
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