Method for producing high carrier concentration p-Type transparent conducting oxides
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United States of America Patent
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Apr 14, 2009
Grant Date -
May 22, 2008
app pub date -
Apr 2, 2002
filing date -
Aug 17, 2001
priority date (Note) -
Expired
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Abstract
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
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