Damascene interconnect structure having air gaps between metal lines and method for fabricating the same
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United States of America Patent
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Issued Date -
May 29, 2008
app pub date -
Nov 27, 2007
filing date -
Nov 27, 2006
priority date (Note) -
Abandoned
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Abstract
An exemplary damascene interconnect structure includes a substrate (20), a first dielectric layer (21) on the substrate, a plurality of trenches (27) formed in the first dielectric layer, and a plurality of metal lines (24) filled in the trenches. The first dielectric layer includes multi sub-dielectric layers (211, 212, 213). Wherein a plurality of air gaps (28) are maintained between the metal lines and at least one of the sub-dielectric layers. A method for fabricating the damascene interconnect structure is also provided.
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