Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof
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United States of America Patent
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Apr 6, 2010
Grant Date -
May 29, 2008
app pub date -
Jul 19, 2006
filing date -
Jul 19, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e21 dopant atoms per cubic centimeter. A method for forming the polysilicon resistor uses corresponding implant doses from about 1e14 to about 1e16 dopant ions per square centimeter. The p dopant and the n dopant may be provided simultaneously or sequentially. The method provides certain polysilicon resistors with a sheet resistance percentage standard deviation of less than about 1.5%, for a polysilicon resistor having a sheet resistance from about 100 to about 5000 ohms per square.
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