Nonvolatile memory with variable read threshold

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United States of America Patent

PATENT NO 7558109
APP PUB NO 20080123420A1
SERIAL NO

11556626

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brandman, Yigal Los Altos Hills , US 24 1689
Conley, Kevin M San Jose , US 105 8280

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