HIGH TEMPERATURE SUSTAINABLE PIEZOELECTRIC SENSORS USING ETCHED OR MICROMACHINED PIEZOELECTRIC FILMS

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United States of America Patent

APP PUB NO 20080129150A1
SERIAL NO

11950993

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Abstract

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The present invention is directed to sensors that use wide band gap piezoelectric films such as aluminum nitride and zinc oxide. The films can be deposited with chemical and physical methods and etched or micro machined into miniature and micro sensing elements. Various piezoelectric sensing structures such as compression mode and cantilever-type accelerometers, diaphragm-type pressure sensors, and micro sensor arrays can be manufactured with the sensing elements. They can be used in the measurements of vibration, shock, dynamic pressure, stress, and high resolution ultrasound non-destructive test at high temperature up to 800-1000.degree. C.

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Patent Owner(s)

Patent OwnerAddress
ENDEVCO CORPORATION30700 RANCHO VIEJO ROAD SUITE B SAN JUAN CAPISTRANO CA 92675

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhang, Hongxi San Juan Capistrano, CA 36 298

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