Deposition process for graded cobalt barrier layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 5, 2008
app pub date -
Dec 5, 2006
filing date -
Dec 5, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for forming a graded cobalt-containing barrier layer comprises forming a cobalt nitride layer on a semiconductor substrate in a reactor, wherein the semiconductor substrate includes a trench etched into a dielectric layer, forming a cobalt metal layer atop the cobalt nitride layer, and then annealing the cobalt nitride layer and the cobalt metal layer to form a graded cobalt barrier layer. A metal layer may be deposited within the trench on the graded cobalt barrier layer to function as a metal interconnect. The cobalt nitride and cobalt metal layers may be formed using PVD, ALD, and/or CVD techniques.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully