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Abstract

A non-volatile memory and method of fabricating the same are provided. The method of fabricating a non-volatile memory comprises forming a tunnel insulating layer, a first conductive layer and a first patterned hard mask layer on a semiconductor substrate sequentially. A first conductive pattern is formed by etching the first conductive layer using the first patterned hard mask layer as a mask. The first patterned hard mask layer is removed. A second patterned hard mask layer is formed on an edge of the first conductive pattern. A pair of opposing spacers is formed on sidewalls of the second patterned hard mask layer. The first conductive pattern is etched using the second patterned hard mask layer and the spacers as masks to form a pair of stacked structures comprising the spacers, the second patterned hard mask layer and the remaining first conductive pattern. A pair of inter gate insulating layers are formed on sidewalls of the first conductive pattern. A control gate insulating layer is formed on the semiconductor substrate between the pair of inter gate insulating layers. A control gate is formed on the control gate insulating layer.

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First Claim