INTEGRATED CIRCUITS WITH CONDUCTIVE FEATURES IN THROUGH HOLES PASSING THROUGH OTHER CONDUCTIVE FEATURES AND THROUGH A SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Jun 12, 2008
app pub date -
Dec 6, 2006
filing date -
Dec 6, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A backside contact pad is formed in an integrated circuit, possibly designed initially with just top side contact pads (150C), by forming an opening (220) through a top side contact pad (150C) and the semiconductor substrate (110). Conductive material (520, 540, 1110, 1130) is formed in the opening and in contact with the top side pad. The conductive material also provides a backside contact pad (1310). Other embodiments are also provided.
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