Dummy patterns and method of manufacture for mechanical strength of low K dielectric materials in copper interconnect structures for semiconductor devices
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United States of America Patent
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Oct 20, 2009
Grant Date -
Jun 19, 2008
app pub date -
Dec 15, 2006
filing date -
Dec 22, 2005
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Abstract
A method for fabricating a semiconductor device. The method includes providing a semiconductor substrate including a surface region. The method forms a first interlayer dielectric overlying the surface region and forms an interconnect layer overlying the first interlayer dielectric layer. The method also forms a low K dielectric layer overlying the interconnect layer, which has a predetermined shape. The method forms a copper interconnect layer overlying the low K dielectric layer. In a preferred embodiment, the low K dielectric layer maintains the predetermined shape using a dummy pattern structure provided within a portion of the low K dielectric layer to mechanically support and maintain the predetermined shape of the low K dielectric layer between the interconnect layer and the copper interconnect layer.
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