Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
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United States of America Patent
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Dec 22, 2006
filing date -
Dec 22, 2006
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Abstract
This invention discloses method of for manufacturing a trenched semiconductor power device with split gate filling a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer disposed between a top and a bottom gate segments. The method further includes a step of forming the inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide.
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