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Abstract

A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included. The layer structure has an inverted geometry such that the emitter is on a side of the absorber facing away from the light and the cover layer is configured as a transparent antireflective layer and as a passivation layer of the absorber, the passivation layer forms a surface field that reflects minority charge carriers, the first ohmic contact structure penetrating the transparent antireflective layer and the second ohmic contact structure configured over a surface area of the emitter.

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