Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
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United States of America Patent
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Oct 7, 2008
Grant Date -
Jul 3, 2008
app pub date -
Dec 29, 2006
filing date -
Dec 29, 2006
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Abstract
Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at higher voltages for certain memory cells that may have undergone partial programming.
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