Method and structure for fabricating solar cells using a layer transfer process

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United States of America Patent

PATENT NO 7759220
SERIAL NO

11784524

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Abstract

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A reusable silicon substrate device for use with layer transfer process. The device has a reusable substrate having a surface region, a cleave region, and a total thickness of material. The total thickness of material is at least N times greater than a first thickness of material to be removed. In a specific embodiment, the first thickness of material to be removed is between the surface region and the cleave region, whereupon N is an integer greater than about ten. The device also has a chuck member adapted to hold a handle substrate member in place. The chuck member is configured to hold the handle substrate in a manner to facilitate bonding the handle substrate to the first thickness of material to be removed. In a preferred embodiment, the device has a mechanical pressure device operably coupled to the chuck member. The mechanical pressure device is adapted to provide a force to cause bonding of the handle substrate to the first thickness of material to be removed.

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Patent Owner(s)

Patent OwnerAddress
SILICON GENESIS CORPORATION61 DAGGETT DRIVE SAN JOSE CA 95134

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Henley, Francois J Aptos, US 178 9676

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