Method for fabricating semiconductor device with an intermediate stack structure
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United States of America Patent
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Aug 30, 2011
Grant Date -
Jul 3, 2008
app pub date -
Dec 7, 2007
filing date -
Dec 27, 2006
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Abstract
A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.
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