Electric power semiconductor device
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United States of America Patent
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Feb 16, 2010
Grant Date -
Jul 10, 2008
app pub date -
Oct 16, 2007
filing date -
Aug 30, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
An electric power semiconductor device including first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively, first and second semiconductor chips mounted on the first and second circuit patterns, respectively, a multilayer electrode plate assembly disposed between the first and second insulating substrates, having first, second and third electrode terminals provided with a distance from each other, a first connecting conductor made by wire bonding for connecting the first and second semiconductor chips to the first and second electrode terminals, and a second connecting conductor having an extending portion extended from a part of the third electrode terminal to be connected to the second circuit pattern, and the connection between the extending portion of the third electrode terminal and the second circuit pattern is implemented by a solder.
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