Thermally contained/insulated phase change memory device and method
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United States of America Patent
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Apr 26, 2011
Grant Date -
Jul 10, 2008
app pub date -
Mar 18, 2008
filing date -
Nov 15, 2005
priority date (Note) -
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Abstract
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including a phase-change layer positioned between and in electrical contact with the electrodes, wherein the lateral extent of the phase change layer is less than the lateral extent of the electrodes. An isolation material is positioned between the phase change layer and the dielectric layer, wherein the thermal conductivity of the isolation material is lower than the thermal conductivity of the dielectric material.
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