Semiconductor device
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United States of America Patent
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Apr 22, 2014
Issued Date -
N/A
app pub date -
Jan 8, 2008
filing date -
Jan 12, 2007
priority date (Note) -
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Abstract
A transistor of a characteristic checking element has a gate electrode connected to a measurement pad disposed in a dicing line and to an internal measurement pad disposed inside a semiconductor device. In a P/W process, a gate insulating film of the transistor is broken by an electric voltage applied via the internal measurement pad. Since the gate insulating film of the transistor is broken, a new current path is formed. Thus, measurement of accurate characteristics of the characteristic checking element is inhibited.
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