Structure of trench MOSFET and method for manufacturing the same
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United States of America Patent
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Jan 18, 2011
Issued Date -
N/A
app pub date -
Aug 30, 2007
filing date -
Jan 16, 2007
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Abstract
A trench MOSFET with copper metal connections includes a substrate provided with a plurality of trenches. A gate oxide layer is formed on the sidewalls and bottoms of the trenches. A conductive layer is filled in the trenches to be used as a gate of the MOSFET. A plurality of source and body regions are formed in an epi layer. An insulating layer is formed on the epi layer and formed with a plurality of metal contact holes therein for contacting respective source and body regions. A barrier metal layer is formed on the sidewalls and bottoms of the metal contact holes in direct contact with respective source and body regions. A metal contact layer is filled in the metal contact holes. A copper metal layer is formed on another barrier metal layer on the insulating layer connected to respective source regions through the metal contact layer to form metal connections of the MOSFET.
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