Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates
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United States of America Patent
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Issued Date -
Jul 17, 2008
app pub date -
Jan 18, 2006
filing date -
Jan 24, 2005
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Abandoned
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Abstract
The invention relates to a method for producing c-plane GaN substrates or Al.sub.xGa.sub.1-xN substrates using an original substrate. Said method is characterized by the following steps: a tetragonal (100)-oriented or (-100)-oriented original LiAlO.sub.2 substrate is used; said original substrate is nitrided in a nitrogen compound-containing atmosphere at temperatures lying below the decomposition temperature of LiAlO.sub.2; a nucleation layer is grown at temperatures ranging between 500.degree. C. and 700.degree. C. by adding GaCl or AlCl or a mixture of GaCl and AlCl in a nitrogen compound-containing atmosphere; single-crystalline c-plane-oriented GaN or Al.sub.xGa.sub.1-xN is grown on the nucleation layer at temperatures ranging between 900.degree. C. and 1050.degree. C. by means of hydride vapor phase epitaxy (HVPE) with GaCl or AlCl or a GaCl/AlCl mixture in a nitrogen compound-containing atmosphere; and the substrate is cooled.
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