CARBON NANOTUBE TRANSISTOR HAVING LOW FRINGE CAPACITANCE AND LOW CHANNEL RESISTANCE

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United States of America Patent

APP PUB NO 20080173864A1
SERIAL NO

11625307

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Abstract

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A CNT transistor has source extension 36a and drain extension 36b that shunt electrical current and reduce the effective CNT resistance and allow significant reductions in fringe capacitances 28 30. The extensions 36a 36b are electrically conductive, and are electrically connected to the source electrode 22 and drain electrode 24. The extensions each span a portion of gaps 35a 35b. Consequently, the source and drain can be located relatively far from the gate electrode 26, thereby reducing the fringe capacitances 28 30. Nanotube 20 is a semiconducting single-walled carbon nanotube, and the extensions 36a 36b comprise metallic-conducting nanotubes surrounding and coaxial with the nanotube 20. The nanotube 20 and extensions 36a 36b are fabricated from a multiwalled nanotube by selectively removing outer nanotubes in a region near the gate electrode. Alternatively, the extensions 36a 36b can comprise metal deposited on peripheral portions of the semiconducting CNT 20.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA AMERICA RESEARCH INC1 TELCORDIA DRIVE SUITE 1S201 PISCATAWAY NJ 08854

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Shinobu Palo Alto, CA 110 1377
Paul, Bipul C Sunnyvale, CA 68 307

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