THERMOELECTRIC NANOWIRE COMPOSITES
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United States of America Patent
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Issued Date -
Jul 31, 2008
app pub date -
Aug 22, 2007
filing date -
Aug 23, 2006
priority date (Note) -
Abandoned
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Abstract
An MOCVD process provides aligned p- and n- type nanowire arrays which are then filled with p- and n-type thermoelectric films to form the respective p-leg and n-leg of a thermoelectric device. The thermoelectric nanowire synthesis process is integrated with a photolithographic microfabrication process. The locations of the p- and n-type nanowire micro arrays are defined by photolithography. Metal contact pads at the bottom and top of these nanowire arrays which link the p- and n-type nanowires in series are defined and aligned by photolithography.
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