Methods for monitoring ion implant process in bond and cleave, silicon-on-insulator (SOI) wafer manufacturing
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United States of America Patent
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Issued Date -
Jul 31, 2008
app pub date -
Dec 3, 2007
filing date -
Dec 1, 2006
priority date (Note) -
Abandoned
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Abstract
A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Q.sub.d) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation V.sub.PV.apprxeq.kT.PHI./.omega.Q.sub.net where V.sub.PV is photo voltage generated in the implanted wafer, .PHI. is a light flux of the modulated light source, T is temperature of the wafer, and .omega. is a light modulation frequency of the modulated light source.
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