Resistance variable memory devices with passivating material
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United States of America Patent
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Jan 4, 2011
Issued Date -
N/A
app pub date -
Jan 24, 2008
filing date -
Aug 29, 2001
priority date (Note) -
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Abstract
solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of “A” or an oxide of “B”. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.
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