Photovoltaic device and process for producing same

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United States of America Patent

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12003261

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A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 .mu.m to 2 .mu.m, and a Raman ratio of from 3.0 to 8.0.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI HEAVY INDUSTRIES LTD2-3 MARUNOUCHI 3-CHOME CHIYODA-KU TOKYO 1008332 ?1008332

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakano, Youji Nagasaki-shi, JP 13 140
Takeuchi, Yoshiaki Nagasaki-shi, JP 122 1876
Yamaguchi, Kengo Nagasaki-shi, JP 30 254
Yamauchi, Yasuhiro Nagasaki-shi, JP 167 1655

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