Importance

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Abstract

A method and device for providing electrostatic discharge (ESD) protection are disclosed. The method uses the gate-controlled conductivity of field n-channel metal-oxide-semiconductor field effect transistor (field NMOSFET), wherein considerable ESD current can be conducted away when any ESD event beyond range of operation voltage, unlike PMOS ESD protection which is to be turned on at negative voltage. Instead of the traditional two-stage ESD protection (using one ESD protection between open drain output and V.sub.SS and the other ESD protection between V.sub.DD and V.sub.SS), the device can be directly used between open drain output and power source V.sub.DD for the wide range of operation voltage. Unlike the floating-gate field NMOS using punch through current for ESD protection, a controllable triggered voltage by changing the gate threshold voltage supports the device to be a robust ESD protection.

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First Claim