ETCHING METHOD AND ETCHING COMPOSITION USEFUL FOR THE METHOD
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United States of America Patent
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Issued Date -
Aug 28, 2008
app pub date -
Feb 28, 2008
filing date -
Feb 28, 2007
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Abstract
In etching of silicon nitride with a phosphorus type, if etching is carried for a long time, silicon oxide tends to precipitate, and it has been impossible to constantly carry out the etching for a long period of time. By an etching method for silicon nitride using a composition comprising a phosphorus compound, a boron compound, a silicon compound and/or their fluorides thereof, there will be no precipitation of silicon oxide even when the composition is used for a long time. It is particularly preferred to further add nitric acid and/or a nitrate, whereby stability of selectivity will be increased.
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