PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS
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United States of America Patent
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Issued Date -
Aug 28, 2008
app pub date -
Feb 21, 2008
filing date -
Feb 23, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a novel process for producing (Al, Ga)InN and AlGaInN single crystals by means of a modified HVPE process, and also to (Al, Ga)InN and AlGaInN bulk crystals of high quality, in particular homogeneity. The III-V compound semiconductors produced by the process according to the invention are used in optoelectronics, in particular for blue, white and green LEDs and also for high-power, high-temperature and high-frequency field effect transistors.
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