PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 28, 2008
app pub date -
Feb 21, 2008
filing date -
Feb 23, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention relates to a novel process for producing (Al, Ga)N and AlGaN single crystals by means of a modified HVPE process, and also to (Al, Ga)N and AlGaN single crystals of high quality. The III-V compound semiconductors produced by the process according to the invention are used in optoelectronics, in particular for blue, white and green LEDs and also for high-power, high-temperature and high-frequency field effect transistors.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully