DC-DC Converter that Includes a High Frequency Power MESFET Gate Drive Circuit
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United States of America Patent
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app pub date -
Feb 18, 2008
filing date -
Jan 26, 2006
priority date (Note) -
Abandoned
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Abstract
A DC-DC converter that includes a high frequency power MESFET gate drive circuit is provided. The gate drive circuits are intended to be used in switching regulators where at least one switching device is an N-channel MESFET. For regulators of this type, the gate drive circuits provide gate drive at the correct voltage to ensure that MESFETs are neither under driven (resulting in incorrect circuit operation) nor over driven (resulting in MESFET damage or excess current or power loss).
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