Method for fabricating trench DMOS transistors and schottky elements
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United States of America Patent
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app pub date -
Feb 23, 2007
filing date -
Feb 23, 2007
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Abstract
A method uses simplified processes to complete the forming of the trench DMOS transistors and Schottky contacts. In the processes, only four masks, i.e. a trench pattern mask, a contact-hole pattern mask, a P+ contact pattern mask and a conductive-wire pattern mask, are applied to create desired trench DMOS transistors. In addition to the trench DMOS transistors, a Schottky contact is simultaneously formed at a junction between a conductive layer and a doped body region in the trench DMOS transistors without additional photolithography process.
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