Microwave hybrid and plasma rapid thermal processing of semiconductor wafers
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United States of America Patent
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Issued Date -
Aug 28, 2008
app pub date -
Jan 23, 2008
filing date -
Jan 25, 2007
priority date (Note) -
Abandoned
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Abstract
Microwave energy is used as a radiation source for rapid thermal processing of semiconductor wafers. In one aspect, a hybrid material formed from a microwave modulator material is used to provide temperature uniformity across the wafer and to avoid cracking or breaking of wafers due to the development of thermal stresses. In another aspect, microwave-generated atmospheric pressure plasma is used to heat the wafer either directly or indirectly.
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